onsemi MUN5211T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

Bipolar Transistors (BJT); MUN5211T1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

DIGITAL TRANSISTOR (BRT) Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

MUN5211 Series 50 V 100 mA R1-10 kO R2-10 kO NPN Digital Transistor - SOT-323

NPN Bipolar Digital Transistor (BRT)

35@5mA,10V 1 NPN - Pre Biased 202mW 100mA 50V 500nA SOT-323(SC-70) Digital Transistors ROHS

Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

TRANSISTOR, RF, NPN, 50V, SOT-323-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;

Brt Transistor, 50V, 10K/10Kohm, Sc70, Full Reel; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:10Kohm; Núm. De Contactos:3 |Onsemi MUN5211T1G

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.