onsemi MUN2216T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

Brt Transistor, 50V, 4.7Kohm, Sc-59; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; Base Emitter Resistor R2:-Rohs Compliant: Yes |Onsemi MUN2216T1G

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.