onsemi MUN2211T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-59

MUN2211T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 10 KOHMS, RATIO OF 1, 3-PIN SC-59

250mV@ 300¦ÌA,10mA NPN - Pre-Biased 338mW 6.0Vdc 500nA 50Vdc 50V 100mA SC-59 2.9mm*1.5mm*1.15mm

Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

Brt Transistor, 50V, 10K/10Kohm, Sc-59; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MUN2211T1G.

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.