These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.
OPTOCOUPLER, SMD; No. of Channels:1; Isolation Voltage:2.5kV; Optocoupler Output Type:Phototransistor; Input Current:10mA; Output Voltage:70V; Opto Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Approval Bodies:UL; Current Transfer Ratio Min:63%; External Depth:5.84mm; External Length / Height:3.18mm; External Width:6.1mm; Fall Time tf:2.8µs; Forward Current If(AV):10mA; Operating Temperature Range:-40°C to +100°C; Output Type:Phototransistor; Rise Time:3µs; Test Voltage:3000V