공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMMUN2213LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
onsemiMMUN2233LT1G
Bipolar Transistors (BJT); MMUN2233LT1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 3
onsemiMMUN2212LT1G
Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Diodes Inc.DDTC143ZCA-7-F
TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
Diodes Inc.DDTC123JCA-7-F
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
Diodes Inc.DDTC114TCA-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 onsemi MMUN2214LT1G에 대한 설명입니다.
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 47 kohm
Bipolar Transistors (BJT); MMUN2214LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
NPN SILICON BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
MMUN2214LT1G NPN DIGITAL TRANSISTOR,100MA 50V 10 KOHM, RATIO OF 0.21,3-PIN SOT-23
80@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Pre Biased Triodes NPN Ic=100mA Vceo=50V hfe=80 P=400mW SOT23
Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Base Emitter Resistor R2:47Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2214LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책