onsemi MMUN2212LT1G

Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

MMUN Series 50 V 100 mA 22 kOhm NPN Silicon Bias Resistor Transistor - SOT-23

MMUN2212LT1G NPN DIGI TRANSISTOR, 100MA 50 V 22 KOHM, RATIO OF 1, 3-PIN SOT-23

250mV@ 300¦ÌA,10mA NPN - Pre-Biased 400mW 500nA 50V 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*1mm

NPN Bipolar Digital Transistor (BRT)

Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R

NPN - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi MMUN2212LT1G.

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.