onsemi MMUN2116LT1G

ON SEMI MMUN2116LT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 50 V, 3-PIN SOT-23

PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

250mV@ 1mA,10mA PNP - Pre-Biased 400mW 500nA 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*940¦Ìm

MMUN2116LT series 50V 100mA 3-Pin SOT-23 Trans Digital BJT PNP

PNP Bipolar Digital Transistor (BRT)

PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

BIAS RESISTOR TRANSISTOR; COLLECTOR EMIT; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -;

Bias Resistor Transistor; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:4.7Kohm; Resistor R2 Base-Emisor:-; Ratio De La Resistencia, R1/R2:-; Núm. De Contactos:3 |Onsemi MMUN2116LT1G

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.