가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMDF2C03HDR2G | 0 | 2500 | 6d | ||||||||
| Farnell | MMDF2C03HDR2G | 0 | 1 | 16h | ||||||||
| element14 APAC | MMDF2C03HDR2G | 0 | 1 | 6h | ||||||||
| Win Source | WS-MMDF2C03HDR2G | 10,800 | 60 | 17h | ||||||||
| Worldway Electronics | MMDF2C03HDR2G | 28,338 | 7 | Tape & Reel | 16h |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-10-14
LTD Date2011-04-14
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
InfineonAUIRF7309QTR
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
설명
유통업체에서 제공한 onsemi MMDF2C03HDR2G에 대한 설명입니다.
Transistor MOSFET N/P-CH 30V 4.1A/3A 8-Pin SOIC N T/R
Power MOSFET 30V 4.1 A 70 mOhm Dual Complementary SO-8
Tape & Reel (TR) Surface Mount N and P-Channel 8 Mosfet Array 4.1A 3A 4.1A 2W 194ns
Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.1A; On Resistance, Rds(on):70mohm; Package/Case:8-SOIC; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.1 A
Current Rating2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time194 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance630 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2 W
Rds On Max70 mΩ
Rise Time18 ns
Threshold Voltage1.7 V
Turn-Off Delay Time81 ns
Voltage Rating (DC)30 V