가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMBTA13LT1G | 60,000 | 3K | 2d | ||||||||
| Newark | MMBTA13LT1G | 3,270 | 1 | Cut Tape | ||||||||
| Arrow Electronics | MMBTA13LT1G | 7,917 | 1 | |||||||||
| Verical | MMBTA13LT1G | 54,000 | 18750 | |||||||||
| Future Electronics | MMBTA13LT1G | 696,000 | 3K | Tape & Reel |
대체 부품
Price @ 1000
$ 0.042
$ 0.055
$ 0.055
Stock
8,787,078
1,635,568
1,635,568
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
300 mA
300 mA
300 mA
Transition Frequency
125 MHz
125 MHz
125 MHz
Collector Emitter Saturation Voltage
1.5 V
1.5 V
1.5 V
hFE Min
10000
10000
10000
Power Dissipation
225 mW
-
-
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMMBTA14LT1
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
onsemiMMBTA14LT1G
Bipolar Transistors (BJT); MMBTA14LT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 300 mA
설명
유통업체에서 제공한 onsemi MMBTA13LT1G에 대한 설명입니다.
Bipolar Transistors (BJT); MMBTA13LT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 300 mA
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Darlington Transistor, Darlington, NPN, 30 V, 225 mW, 300 mA, SOT-23, 3 Pins
MMBTA13L Series 30 V 300 mA NPN Darlington Amplifier Transistor - SOT-23-3
NPN Bipolar Darlington Transistor
300 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANS, BIPOL, NPN, 30V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 225mW; DC Collector Current: 300mA; DC Current Gain hFE: 10000hFE; Trans
Darlington Npn, 300 Ma, 30 V, Full Reel; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:Aec-Q101; Collector Emitter Voltage Max:30V Rohs Compliant: Yes |Onsemi MMBTA13LT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current300 mA
Current Rating300 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min10000
Max Breakdown Voltage30 V
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency125 MHz
Voltage Rating (DC)30 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책