가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT4401LT1G | 2,640,000 | 3K | Tape & Reel | ||||||||
| Avnet | MMBT4401LT1G | 597,874 | 3K | 2d | ||||||||
| Newark | MMBT4401LT1G | 117,902 | 1 | Cut Tape | ||||||||
| Verical | MMBT4401LT1G | 1,989,000 | 3K | |||||||||
| Arrow Electronics | MMBT4401LT1G | 1,971,000 | 3K |
대체 부품
Price @ 1000
$ 0.037
$ 0.041
$ 0.041
Stock
53,198,807
3,471,533
3,471,533
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
750 mV
750 mV
750 mV
hFE Min
40
40
40
Power Dissipation
225 mW
225 mW
225 mW
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMMBT2222ALT3G
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Diodes Inc.DDTD123EC-7-F
DDTD Series 50 V 500 mA NPN Pre-Biased Surface Mount Transistor - SOT-23-3
설명
유통업체에서 제공한 onsemi MMBT4401LT1G에 대한 설명입니다.
Transistor; Bipolar; Si; NPN; Switching; VCEO 40VDC; IC 600mA; PD 225mW; SOT-23; hFE 40
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount
Trans General Purpose BJT NPN 40 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Bipolar Transistors (BJT); MMBT4401LT1G; ON SEMICONDUCTOR; NPN; 40 V; 600 mA; 3
40V 300mW 100@150mA,1V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS NPN 40V 0.6A SOT23 / Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
Switching Transistor NPN Silicon VCEO=40V VEBO=6V IC=600mA SOT23
40 V, 600 mA NPN Bipolar Junction Transistor
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 250hFE; Transistor Cas
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage750 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min40
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책