가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT3904WT1G | 8,607,000 | 3K | Tape & Reel | ||||||||
| Avnet | MMBT3904WT1G | 150,000 | 35715 | 2d | ||||||||
| Newark | MMBT3904WT1G | 9,487 | 1 | Cut Tape | ||||||||
| Verical | MMBT3904WT1G | 165,000 | 3K | |||||||||
| Arrow Electronics | MMBT3904WT1G | 7,211 | 1 |
대체 부품
Price @ 1000
$ 0.033
$ 0.031
$ 0.031
Stock
27,112,400
3,071,321
3,071,321
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SC
SOT-323
SOT-323
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
150 mW
200 mW
200 mW
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMBT3946DW1T1G
ON SEMI MBT3946DW1T1G DUAL NPN+PNP RF BIPOLAR TRANSISTOR,0.2 A,40V,6-PIN SC-88
onsemiMBT3946DW1T2G
ON SEMI MBT3946DW1T2G DUAL NPN+PNP BIPOLAR TRANSISTOR, 0.2 A, 40 V, 6-PIN SC-88
onsemiMMBT2222AWT1G
Bipolar Transistors (BJT); MMBT2222AWT1G; ON SEMICONDUCTOR; NPN; 3; 40 V; 600 mA
NXP SemiconductorsBC847AT,115
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110
설명
유통업체에서 제공한 onsemi MMBT3904WT1G에 대한 설명입니다.
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 150MW, HFE 30
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount
40V 150mW 100@10mA,1V 200mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
MMBT Series 40 V 200 mA SMT NPN Silicon General Purpose Transistor - SOT-323
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-323 T/R
Avnet Japan
Bipolar Transistors - BJT 200mA 60V NPN
NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
TRANSISTOR, NPN, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Ca
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating8.6 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency300 MHz
TypeGeneral Purpose
Voltage Rating (DC)40 V
Dimensions
Height889 µm
Length2.1844 mm
Width1.3462 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책