onsemi MMBT2222ALT1G

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 225mW Surface Mount SOT-23-3 Tape & Reel

TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 600MA, PD 225MW, SOT-23

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount

Bipolar Transistors (BJT); MMBT2222ALT1G; ON SEMICONDUCTOR; NPN; 3; 40 V; 600 mA

40V 225mW 100@150mA,10V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS

NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V

TRANSISTOR, NPN, 40V, SOT-23, REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 50hFE; Tra

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260