유통업체에서 제공한 onsemi MMBD301LT1G에 대한 설명입니다.
DIODE, SCHOTTKY BARRIER, VR 30V, PKG SOT-23 (TO-236),VF 0.52VDC, TJ +125C, PD 200MW
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 450 mV, 0.9 pF, SOT-23
SILICON HOT-CARRIER SCHOTTKY BARRIER DIODE Mixer Diode, Ultra High Frequency, Silicon, TO-236
onsemi Schottky Diodes Diodes, 10mA, 30V, surface mount, SOT-23encapsulation, 3needle
MMBD301LT1G Series 30 V 200 nA Surface Mount Silicon Hot-Carrier Diode-SOT-23-3
30V Single 450mV@1mA 200mA SOT-23(TO-236) Schottky Barrier Diodes (SBD) ROHS
RF Diode Schottky 30V 200mW 3-Pin SOT-23 T/R
DIODE SCHOTTKY 30V 200MW SOT23-3
SCHOTTKY RECTIFIER, 10MA 30V SOT-23; DIO; 10mA Diode Configuration:Single; Reverse Voltage Vr:30V; Forward Current If
Diode, Schottky, 200Ma, 30V, To-236-3, Full Reel; Diode Configuration:Single; Reverse Voltage:30V; Forward Current:200Ma; Forward Voltage:600Mv; Diode Capacitance:0.9Pf; Diode Case Style:Sot-23; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMBD301LT1G.
These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.