onsemi MC14012BCPG

NAND 4012 e3 4000B logic gate circuit 100ns @ 15V 50pF 3.68mm 8.8mA 8.8mA 3.5V-11V
$ 0.75
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi MC14012BCPG에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지13년 전

Newark

Augswan

Farnell

RS (Formerly Allied Electronics)

재고 내역

3개월간의 트렌드:
+0.00%

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대체 부품

Price @ 1000
$ 0.75
$ 0.353
$ 0.353
Stock
104,424
492,582
492,582
Authorized Distributors
3
5
5
Case/Package
DIP
PDIP
PDIP
Number of Pins
14
14
14
Logic Function
NAND
NAND
NAND
Number of Circuits
2
2
2
Number of Inputs
4
4
4
Propagation Delay
300 ns
90 ns
90 ns
Low Level Output Current
4.2 mA
4.2 mA
4.2 mA
High Level Output Current
-4.2 mA
-4.2 mA
-4.2 mA
Min Supply Voltage
3 V
3 V
3 V
Max Supply Voltage
18 V
18 V
18 V
Quiescent Current
1 µA
5 µA
5 µA

공급망

Country of OriginIndonesia
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2000-04-01
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2013-10-18
LTD Date2014-04-18

관련 부품

Texas InstrumentsCD4012BE
NAND CD4012 EAR99 4000B logic gate circuit 90ns @ 15V 50pF 5.08mm 3.4mA 3.4mA 3.5V-11V
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2-ch, 4-input, 3-V to 18-V NAND gates 14-PDIP -55 to 125
Texas InstrumentsSN74HC20N
2-ch, 4-input, 2-V to 6-V 5.2 mA drive strength NAND gate 14-PDIP -40 to 85
NXP Semiconductors74HCT20N,652
Nand-gate; PDIP; Ttl Logic; -40; +125; 3.5 Pf (typ.); 13 Ns (typ.)
NAND 74ACT20 e0 74ACT logic gate circuit 9ns @ 5V 50pF 18.86mm 24mA 24mA 5.5V
NXP SemiconductorsN74F20N,602
NAND Gate, F/FAST Series, 2-Func, 4-Input, TTL, PDIP14

설명

유통업체에서 제공한 onsemi MC14012BCPG에 대한 설명입니다.

NAND 4012 e3 4000B logic gate circuit 100ns @ 15V 50pF 3.68mm 8.8mA 8.8mA 3.5V-11V
NAND Gate, 4000/14000/40000 Series, 2-Func, 4-Input, CMOS, PDIP14
NAND Gate 2-Element 4-IN CMOS Automotive 14-Pin PDIP Tube
CMOS LOGIC, DUAL 4-INPUT NAND GATE, PDIP-14, PB-FREE
IC, 4000 CMOS, 4012, DIP14, 15V; Logic Family / Base Number: MC14012; Logic Type: NAND; Output Current: 8.8mA; No. of Inputs: 4; Supply Voltage Min: 3V; Supply Voltage Max: 18V; Logic Case Style: DIP; No. of Pins: 14Pins; Logic
These Dual 4 Input NAND Gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.

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