대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.434
$ 0.401
Stock
155,416
440,276
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-251-3
TO-251
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
8 A
8 A
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
40
40
Power Dissipation
1.75 W
1.75 W
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
관련 부품
onsemi2SC5706-P-E
Bulk Through Hole NPN ROHS3Compliant Bipolar (BJT) Transistor 200 @ 500mA 2V 1muA ICBO 800mW 400MHz
설명
유통업체에서 제공한 onsemi KSH44H11ITU에 대한 설명입니다.
NPN 1.75 W 80 V 8 A Surface Mount Epitaxial Silicon Transistor - TO-252-3
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(3+Tab) IPAK Tube
NPN Epitaxial Silicon Transistor
Designed for general-purpose power and switching, such as output or driver stages in applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min40
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.75 W
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height9.85 mm