공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
관련 부품
InfineonIRFR1205TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W
InfineonBSC010NE2LSATMA1
TRANSISTOR, MOSFET, N-CHANNEL, 25V, 39A, 1.0 MOHM, 242A, 33 NC, TSDSON8
설명
유통업체에서 제공한 onsemi ISL9N2357D3ST에 대한 설명입니다.
20 A 30 V 0.007 ohm N-CHANNEL Si POWER MOSFET TO-252AA
Trans MOSFET N-CH Si 30V 35A 3-Pin(2+Tab) DPAK T/R
MOSFET 30V 35a NCh MOSFET 0.007 Ohm
Power Field-Effect Transistor, 35A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7 mΩ
Element ConfigurationSingle
Fall Time53 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rise Time69 ns
Turn-Off Delay Time84 ns