Infineon IRFR1205TRPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W

Single N-Channel 55 V 0.027 Ohm 65nC HEXFET® Power Mosfet - TO-252AA

Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 44A DPAK

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:44A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes |Infineon IRFR1205TRPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 44 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 60 / Rise Time ns = 69 / Turn-OFF Delay Time ns = 47 / Turn-ON Delay Time ns = 7.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 107