관련 부품
onsemiHUF75321S3S
N-CHANNEL SINGLE WITH BUILT-IN DIODE TO-263AB SILICON Mosfet Transistor 35A 55V 0.034Ohm
InfineonIRF4905SPBF
Transistor: P-MOSFET; unipolar; -70V; -44A; 0.02ohm; 170W; -55+150 deg.C; SMD; TO263 (D2PAK)
설명
유통업체에서 제공한 onsemi HUFA75321S3ST에 대한 설명입니다.
MOSFET N-CH 55V 35A D2PAK
35A, 55V, 0.034 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 20a, 55V N-Channel UltraFET
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Operating Temperature175 °C
Max Power Dissipation93 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation93 W
Rds On Max34 mΩ
Rise Time55 ns
Turn-Off Delay Time47 ns
Voltage Rating (DC)55 V