가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF76419S3ST | 2,512 | 355 | |||||||||
| Rochester Electronics | HUF76419S3ST | 41,739 | 18m | |||||||||
| Microchip USA | HUF76419S3ST | 349 | 600 | Bulk | 17h | |||||||
| Win Source | WS-HUF76419S3ST | 3,172 | 70 | 1h | ||||||||
| Worldway Electronics | HUF76419S3ST | 21,752 | 7 | Bulk | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-11
LTD Date2010-06-11
관련 부품
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB45N06S4L08ATMA3
60V, N-Ch, 7.9 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
설명
유통업체에서 제공한 onsemi HUF76419S3ST에 대한 설명입니다.
MOSFET N-CH 60V 29A D2PAK
60V N-Channel Logic Level UltraFET MOSFET
PWR MOS ULTRAFET 60V/30A/0.042 OHMS N-CH LL TO-263AB T&R
MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch
Power Field-Effect Transistor, 29A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)29 A
Current29 A
Current Rating27 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time74 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max35 mΩ
Rise Time150 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time5.9 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height5.08 mm