onsemi HUF75639P3

Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB

N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail

100 V, 56 A, 0.025 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.