가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF75307T3ST | 5,000 | 721 | |||||||||
| Rochester Electronics | HUF75307T3ST | 5,276 | 21h | |||||||||
| Avnet | HUF75307T3ST | 0 | 4K | 23h | ||||||||
| Microchip USA | HUF75307T3ST | 117 | 600 | Tray | 13h | |||||||
| Component Stockers USA | HUF75307T3ST | 4,015 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-11-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiHUFA75307T3ST
Transistor,Mosfet,N-Channel,55V V(Br)Dss,2.6A I(D),Sot-223 Rohs Compliant: Yes
InfineonIRFL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
InfineonIRFL024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
InfineonIRLL024NPBF
Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
설명
유통업체에서 제공한 onsemi HUF75307T3ST에 대한 설명입니다.
Trans MOSFET N-CH 55V 2.6A 4-Pin (3+Tab) SOT-223 T/R
TAPE REEL \ 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET PowerMOSFET
PWR MOS 55V/2.6A/0.090 OHMS N-CH SOT-223 TAPE AND REEL
2.6 A 55 V 0.09 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 2.6A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 15a, 55V, N-Ch UltraFET 0.099 Ohm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)2.6 A
Current Rating2.6 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.1 W
Rds On Max90 mΩ
Rise Time30 ns
Turn-Off Delay Time35 ns
Voltage Rating (DC)55 V