공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
관련 부품
onsemiSGS10N60RUFDTU
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
설명
유통업체에서 제공한 onsemi HGTP3N60A4D에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
17 A 600 V N-CHANNEL IGBT TO-220AB
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating17 A
Element ConfigurationSingle
Fall Time100 ns
Max Collector Current17 A
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Reverse Recovery Time19 ns
Rise Time15 ns
Voltage Rating (DC)600 V