공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-06
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
설명
유통업체에서 제공한 onsemi FQU2N100TU에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK
FQU2N100 Series N-Channel 1000 V 9 Ohms Mosfet - TO-220
Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant: Yes |Onsemi FQU2N100TU
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W; Available until stocks are exhausted
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating1.6 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance9 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance520 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max9 Ω
Rise Time30 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)1 kV
Dimensions
Height7.57 mm
Length6.8 mm
Width2.5 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책