공급망
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-04
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2025-09-12
LTD Date2026-03-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
설명
유통업체에서 제공한 onsemi FQT3P20TF에 대한 설명입니다.
Power MOSFET, P-Channel, QFET®, -200 V, -0.67 A, 2.7 Ω, SOT-223
FQT3P20 Series -200 V -0.67 A 2.7 Ohm P-Channel QFET Mosfet - TO-220-3
MOSFET, P-CH, -400V, -0.67A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -670mA; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 2.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)670 mA
Current Rating-670 mA
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.7 Ω
Resistance2.7 Ω
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)-200 V
Dimensions
Height1.6 mm
Length6.5 mm
Width3.56 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책