공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-05-15
LTD Date2013-11-15
관련 부품
InfineonBSP149H6327XTSA1
Power MOSFET, N Channel, 200 V, 660 mA, 1.8 Ohm, SOT-223, 4 Pins, Surface Mount
VishayIRFL214TRPBF
MOSFET, N-CH, 250V, 0.79A, SOT-223; Available until stocks are exhausted Alternative available
설명
유통업체에서 제공한 Infineon BSP149L6327에 대한 설명입니다.
Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R
SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:0.48A; Resistance, Rds On:1.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-1.4V; Case Style:SOT-223; ;RoHS Compliant: Yes
MOSFET, N, REEL 1K; Transistor Polarity:N Channel; Continuous Drain Current Id:480mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; Current Id Max:660mA; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Ptot Max:1.8W; Pulse Current Idm:1.44A; Reel Quantity:1000; SMD Marking:BSP149; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:700mV
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기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)660 mA
Current Rating140 mA
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Elements1
Power Dissipation1.8 W
Rds On Max1.8 Ω
Rise Time3.4 ns
TerminationSMD/SMT
Turn-Off Delay Time45 ns
Turn-On Delay Time5.1 ns
Voltage Rating (DC)200 V
Dimensions
Width6.7 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책