onsemi FQS4901TF

Transistor MOSFET Array Dual N-CH 400V 1.8A 8-Pin SOIC T/R

N-Channel 400 V 4.2 Ohm Surface Mount Mosfet - SOIC-8

TRANSISTOR, N-CHANNEL, QFET MOSFET, 400V, 0.45A, 4.2 OHM AT VGS 10V

N-Channel QFET® MOSFET 400V, 0.45A, 4.2Ω

MOSFET, DUAL N CH, 400V, 0.45A, SOP-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 400V; On Resistance Rds(o; Available until stocks are exhausted Alternative available

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:0.45A; On Resistance, Rds(on):4.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N CHANNEL MOSFET, 400V, SOIC; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:450mA; Drain Source Voltage Vds:400V; On Resistance Rds(on):4.2ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:450mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:1.8A; Termination Type:SMD; Voltage Vds:400V; Voltage Vgs Max:25V; Voltage Vgs th Max:4V