가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | DMP3020LSS-13 | 1 | 1 | |||||||||
| DigiKey | DMP3020LSSDICT-ND | 928 | 1 | Cut Tape | ||||||||
| TME | DMP3020LSS-13 | 0 | 2500 | 17h | ||||||||
| Newark | DMP3020LSS-13 | 0 | 1 | Cut Tape | ||||||||
| Future Electronics | DMP3020LSS-13 | 0 | 2500 | Tape & Reel |
대체 부품
Price @ 1000
$ 0.37
$ 0.519
Stock
1,522,178
611,724
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
SOP
SOIC
Drain to Source Voltage (Vdss)
30 V
-30 V
Continuous Drain Current (ID)
12 A
11 A
Threshold Voltage
-
-2.5 V
Rds On Max
14 mΩ
13.5 mΩ
Gate to Source Voltage (Vgs)
25 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.802 nF
4.03 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-12
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
설명
유통업체에서 제공한 Diodes Inc. DMP3020LSS-13에 대한 설명입니다.
DMP3020LSS: 30 V 14 mOhm Single P-Channel Enhancement Mode Mosfet - SOIC-8
MOSFET P-CH 30V 12A 8-SOIC / Trans MOSFET P-CH 30V 12A 8-Pin SOP T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGS
Diodes Inc SCT
Single P-Channel Enhancement MOSFET SOP8
Power Field-Effect Transistor, 12A I(D), 30V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 25V~30V So-8 T&r 2.5K
DiodesZetex PMOS, Vds=30 V, 6 A, SOP, , 8
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOP
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight850.995985 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.802 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max14 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.5 mm
Length5.3 mm
Width4.1 mm