공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-19
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
설명
유통업체에서 제공한 onsemi FQI3P20TU에 대한 설명입니다.
Trans MOSFET P-CH 200V 2.8A 3-Pin(3+Tab) I2PAK Rail
MOSFET P-CH 200V 2.8A I2PAK
Power Field-Effect Transistor, 2.8A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
3.13W(Ta)£¬52W(Tc) 5V@ 250¦ÌA 8nC@ 10V 1individualPChannel 200V 2.7¦¸@ 1.4A,10V 250pF@25V I2PAK£¬TO-262 Through hole mounting
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current Rating-2.8 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max2.7 Ω
Rise Time35 ns
Turn-Off Delay Time12 ns
Voltage Rating (DC)-200 V