설명
유통업체에서 제공한 onsemi FQI2N90TU에 대한 설명입니다.
Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail
3.13W(Ta),85W(Tc) 5V@ 250¦ÌA 15nC@ 10V 1N 900V 7.2¦¸@ 1.1A,10V 500pF@25V I2PAK,TO-262
Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.2 A
Current Rating2.2 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance7.2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance500 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max7.2 Ω
Rise Time35 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)900 V