onsemi FQI10N60CTU
$ 0.99
Obsolete
관련 부품
STMicroelectronicsSTB10NK60Z-1
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
설명
유통업체에서 제공한 onsemi FQI10N60CTU에 대한 설명입니다.
3.13W(Ta),156W(Tc) 4V@ 250¦ÌA 57nC@ 10V 1N 600V 730m¦¸@ 4.75A,10V 2.04pF@25V I2PAK,TO-262
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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- ON Semiconductor
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- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
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- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)9.5 A
Current Rating9.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance730 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.04 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max730 mΩ
Rise Time69 ns
Turn-Off Delay Time144 ns
Voltage Rating (DC)600 V