가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQD4N25TM-WS | 3,653 | 3h | |||||||||
| Flip Electronics | FQD4N25TM-WS | 27,505 | 6d | |||||||||
| Avnet | FQD4N25TM-WS | 0 | 3334 | 5h | ||||||||
| Farnell | FQD4N25TM-WS | 0 | 2500 | Tape & Reel | 1d | |||||||
| Mouser | 512-FQD4N25TM_WS | 751 | 1 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-14
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FQD4N25TM-WS에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 250 V, 3 A, 1.75 Ω, DPAK
Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) TO-252 T/R
Qf -250V 2.1Ohm Dpak/Reel Rohs Compliant: Yes |Onsemi FQD4N25TM-WS
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 3
2.5W(Ta),37W(Tc) 30V 5V@ 250¦ÌA 5.6nC@ 10 V 1N 250V 1.75¦¸@ 1.5A,10V 3A 200pF@25V TO-252AA 6.73mm*6.22mm*2.39mm
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.75 Ω
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance200 pF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.75 Ω
Resistance1.75 Ω
Rise Time45 ns
Turn-Off Delay Time6.4 ns
Turn-On Delay Time6.8 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책