가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQD5N20LTF | 834 | 13h | |||||||||
| Microchip USA | FQD5N20LTF | 370 | 3500 | Tray | 8h | |||||||
| Worldway Electronics | FQD5N20LTF | 24,634 | 7 | Tape & Reel | 13h | |||||||
| Fly-Wing Technology | FQD5N20LTF | 1,962 | 2d | |||||||||
| Vigor Components | FQD5N20LTF | 10 | 2d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
관련 부품
InfineonIRFR220NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Diodes Inc.ZXMN20B28KTC
Mosfet, N-Ch, 200V, 1.5A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN20B28KTC
설명
유통업체에서 제공한 onsemi FQD5N20LTF에 대한 설명입니다.
MOSFET N-CH 200V 3.8A DPAK
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
MOSFETs 200V N-Ch LL QFET
IC SUPERVISOR 1 CHANNEL 5VSOF
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3.8 A
Current Rating3.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.25 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance325 pF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max1.2 Ω
Rise Time90 ns
Turn-Off Delay Time15 ns
Voltage Rating (DC)200 V