onsemi FQB4N80TM

MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
$ 1.02
Production

가격 및 재고

데이터시트 및 문서

onsemi FQB4N80TM에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지12년 전

Master Electronics

onsemi

Fairchild Semiconductor

DigiKey

재고 내역

3개월간의 트렌드:
-0.04%

공급망

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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설명

유통업체에서 제공한 onsemi FQB4N80TM에 대한 설명입니다.

MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3
N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω
800V N-CHANNEL MOSFET Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 130W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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