onsemi FOD817B3SD

Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD Black T/R

FOD817 Series Single Channel 70 V 5000 Vrms Phototransistor Optocoupler -DIP-4

Transistor Output Optocoupler, 1-Element, 5000V Isolation

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

OPTOCOUPLER, TRANS. O/P, REEL; No. of Channels:1; Isolation Voltage:5kV; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:70V; Opto Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2013); Approval Bodies:cUL, UL, VDE; Breakover Voltage Min:70V; Current Transfer Ratio Max:260%; Current Transfer Ratio Min:130%; Fall Time tf:18000ns; Operating Temperature Max:110°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +110°C; Output Voltage Max:6V; Rise Time:18000ns

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.4 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 130 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 260 / Channels = 1