onsemi FGA50N100BNTD2

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Obsolete

데이터시트 및 문서

onsemi FGA50N100BNTD2에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지12년 전
Datasheet0 페이지0년 전

onsemi

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Fairchild Semiconductor

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공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-03-12
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

관련 부품

FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
TUBE / 1200V Trench IGBT for Induction Cooking 50A COPAK-247 ;RoHS Compliant: Yes
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail

설명

유통업체에서 제공한 onsemi FGA50N100BNTD2에 대한 설명입니다.

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1kV; Transistor Case Style: TO-3P; No. of Pins: 3Pin
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

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