공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-07-01
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
관련 부품
STMicroelectronicsSTGP30H60DF
IGBT 600V 60A 260W TO220 / IGBT Trench Field Stop 600 V 60 A 260 W Through Hole TO-220
InfineonIRG4BC40SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi FGA3060ADF에 대한 설명입니다.
Trans IGBT Chip N=-CH 600V 60A 176000mW 3-Pin(3+Tab) TO-3PN Rail
INSULATED GATE BIPOLAR TRANSISTO / IGBT Trench Field Stop 600 V 60 A 176 W Through Hole TO-3PN
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Vce(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time26 ns
Schedule B8541290080