가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDU7N60NZTU | 8,385 | 673 | |||||||||
| Rochester Electronics | FDU7N60NZTU | 64,295 | 5h | |||||||||
| Microchip USA | FDU7N60NZTU | 456 | 600 | Tray | 7d | |||||||
| Win Source | WS-FDU7N60NZTU | 4,630 | 60 | 6h | ||||||||
| Worldway Electronics | FDU7N60NZTU | 19,010 | 7 | Tube | 37m |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-14
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FDU7N60NZTU에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK Rail
RAIL / UNIFET2 600V N-CHANNEL MOSFET, IPAK
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.25 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance730 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max1.25 Ω
Turn-Off Delay Time40 ns
Turn-On Delay Time17.5 ns
Dimensions
Height7.57 mm
Length6.8 mm
Width2.5 mm