공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiNTD4809NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
설명
유통업체에서 제공한 onsemi FDU6680에 대한 설명입니다.
MOSFET N-CH 30V 12A IPAK
Power Field-Effect Transistor, 12A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFETs 30V N-Channel PowerTrench
30V, NCH , IPAK, TO-251, SINGLE
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.23 nF
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max10 mΩ
Rise Time7 ns
Turn-Off Delay Time29 ns