onsemi FDS7788
$ 2.453
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-01-28
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2010-06-03
LTD Date2010-12-03
관련 부품
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF8734PBF
MOSFET N-CH 30V 21A 8SO N-Channel 30 V 21A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
설명
유통업체에서 제공한 onsemi FDS7788에 대한 설명입니다.
2.5W(Ta) 3V@ 250µA 48nC@ 5V 1individualNChannel 30V 4mΩ@ 18A,10V 3.845pF@15V SOIC-8 SMD mount
Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):0.004ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R DS(ON) in a small package.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.845 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max4 mΩ
Rise Time13 ns
Turn-Off Delay Time62 ns
Turn-On Delay Time15 ns
Dimensions
Height1.75 mm