공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-07-06
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
관련 부품
STMicroelectronicsSTP11NK50ZFP
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 500V 10A TO-220FP
설명
유통업체에서 제공한 onsemi FDPF12N50T에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 500 V, 11.5 A, 650 mΩ, TO-220F
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 11.5A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Drain Source Voltage Vds:500V; Continuous Drain Current Id:11.5A; Operating Temperature Max:150°C; Product Range:Unifet Series; Automotive Qualification Standard:-; Msl:- Rohs Compliant: Yes |Onsemi FDPF12N50T.
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.315 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Rds On Max650 mΩ
Rise Time50 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time24 ns