공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-11-19
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
관련 부품
VishaySIR401DP-T1-GE3
VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
InfineonIRLHM630TRPBF
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
설명
유통업체에서 제공한 onsemi FDPC8014S에 대한 설명입니다.
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 25V
PT9 N 30/12 & PT9 N 25/12 S in PowerClip 56 - 8LD, PQFN, POWERCLIP DUAL, 5.0X6.0 MM, MULTIPHASE
Trans MOSFET N-CH 25V 20A/41A 8-Pin Power 56 EP T/R
25V, 20A, 3.8mohm / 41A, 1.2mohm, DUAL N-Channel, PowerClip 5x6
Power Field-Effect Transistor, 20A I(D), 25V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2 N-Channel -55¡Í~+150¡Í@(Tj) PowerClip56 MOSFETs ROHS
MOSFET 2N-CH 25V 20A PWRCLIP56
IC FLASH 2GBIT PARALLEL 48TSOP I
FET 2-N CH 25V 20A/41A 8PWRCLIP
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight207.7333 mg
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time4 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.375 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max3.8 mΩ
Rise Time6 ns
Schedule B8541290080
Turn-Off Delay Time47 ns
Turn-On Delay Time16 ns
Dimensions
Height800 µm
Length5.1 mm
Width6.1 mm