공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-02-26
LTD Date2019-08-26
관련 부품
VishaySIR496DP-T1-GE3
SIR496DP-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 26 A, 20 V, 8-PIN POWERPAK SO
VishaySI4136DY-T1-GE3
Prices include import duty and tax. MOSFET Transistor, N Channel, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V;
InfineonIRF7457PBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 Vishay SIR890DP-T1-GE3에 대한 설명입니다.
Single N-Channel 20 V 0.0029 Ohms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 30A 8-Pin PowerPAK SO T/R
20V 50A 50W 2.9m´Î@10V10A 2.6V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
N CHANNEL MOSFET, 20V, 50A, SOIC
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 20V 50A 50W 2.9mohm @ 10V
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:50A; On State Resistance:0.0029ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.6V; Case Style:PowerPAK; ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.747 nF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation5 W
Rds On Max2.9 mΩ
Resistance2.9 mΩ
Threshold Voltage2.6 V
Turn-Off Delay Time40 ns
Turn-On Delay Time30 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm