가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRLML2246TRPBF | 16,729 | 1 | |||||||||
| Newark | IRLML2246TRPBF | 0 | 5 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRLML2246TRPBF | 0 | 5 | Bulk | 12h | |||||||
| Avnet | IRLML2246TRPBF | 0 | 9K | 1d | ||||||||
| Farnell | IRLML2246TRPBF | 1,042 | 5 | Cut Tape | 10h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-01-24
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
설명
유통업체에서 제공한 Infineon IRLML2246TRPBF에 대한 설명입니다.
T&R / MOSFET, P-CHANNEL, -20V, -2.6A, 135 mOhm, -2.5V capable, SOT-23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single P-Channel 20 V 236 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
HEXFET POWER MOSFET Small Signal Field-Effect Transistor
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance135 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance220 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.1 V
Number of Elements1
On-State Resistance135 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max135 mΩ
Recovery Time26 ns
Resistance236 MΩ
Rise Time7.7 ns
Schedule B8541290080
Threshold Voltage-1.1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time5.3 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm