공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-27
Lifecycle StatusNRND (Last Updated: 4 months ago)
LTB Date2027-01-10
LTD Date2027-07-10
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 4 months ago)
관련 부품
InfineonIPB072N15N3GATMA1
Power MOSFET, N Channel, 150 V, 100 A, 72 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
InfineonIRFS4115-7PPBF
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
설명
유통업체에서 제공한 onsemi FDMT800150DC에 대한 설명입니다.
PT5 150V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, PQFN, NON-JEDEC, MV, 8.0X8.0 MM
N-Channel PowerTrench® MOSFET, Dual CoolTM 88, 150V, 99A, 6.5mΩ
Power MOSFET, N Channel, 150 V, 99 A, 0.0054 ohm, PQFN, Surface Mount
3.2W(Ta)，156W(Tc) 20V 4V@ 250µA 108nC@ 10 V 1individualNChannel 150V 6.5mΩ@ 15A,10V 15A，99A 8.205nF@75V QFN SMD mount 3.3mm*3.3mm*800μm
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Weight248.52072 mg
Technical
Continuous Drain Current (ID)99 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vds)150 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.205 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.2 W
Rds On Max6.5 mΩ
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time31 ns
Dimensions
Height950 µm