가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFS4115-7PPBF | 0 | 200 | Bulk | 16h | |||||||
| Farnell | IRFS4115-7PPBF | 0 | 1 | 10h | ||||||||
| Microchip USA | IRFS4115-7PPBF | 321 | 150 | Tray | 16h | |||||||
| Win Source | WS-IRFS4115-7PPBF | 4,768 | 21 | 1h | ||||||||
| Worldway Electronics | IRFS41157PPBF | 13,757 | 7 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonIRFS4321TRL7PP
MOSFET N-CH 150V 86A D2PAK-7 / N-Channel 150 V 86A (Tc) 350W (Tc) Surface Mount D2PAK-7
InfineonAUIRFS4115-7P
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
STMicroelectronicsSTH110N10F7-6
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
설명
유통업체에서 제공한 Infineon IRFS4115-7PPBF에 대한 설명입니다.
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH 150V 105A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)105 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance11.8 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance11.8 mΩ
Package Quantity3000
Power Dissipation380 W
Rds On Max11.8 mΩ
Resistance11.8 MΩ
Rise Time50 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time37 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm