공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTB55NF06T4
N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET
onsemiFDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
설명
유통업체에서 제공한 onsemi FDMS86300에 대한 설명입니다.
Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 80V 19A POWER56
Single N-Channel 80 V 5.8 mOhm 86 nC 104 W PowerTrench SMT Mosfet - POWER 56-8
Power MOSFET, N Channel, 80 V, 42 A, 0.0032 ohm, Power 56, Surface Mount
N-Channel PowerTrench® MOSFET 80V, 122A, 3.9mΩ
Power Field-Effect Transistor, 122A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 20-LSSOP (0.240, 6.10mm Width) 13 512 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tape & Reel (TR) 16-Bit Microcontroller
MOSFET, N CH, 150V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight68.1 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.082 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Elements1
Power Dissipation104 W
Rds On Max3.9 mΩ
Rise Time26 ns
Schedule B8541290080
Threshold Voltage3.4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time31 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm