가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FDMS86163P | 726,000 | 3K | Tape & Reel | ||||||||
| Avnet | FDMS86163P | 21,000 | 3K | 4d | ||||||||
| Newark | FDMS86163P | 14,398 | 5 | Cut Tape | ||||||||
| Arrow Electronics | FDMS86163P | 548 | 1 | |||||||||
| Verical | FDMS86163P | 471 | 235 |
데이터시트 및 문서
onsemi FDMS86163P에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트7년 전
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFR3710ZPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg
InfineonIRF3710ZSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20
InfineonIRFR3710ZTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg
VishaySUM60N10-17-E3
Power MOSFET, N Channel, 100 V, 60 A, 0.013 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 onsemi FDMS86163P에 대한 설명입니다.
Trans MOSFET P-CH 100V 7.9A 8-Pin PQFN EP T/R / MOSFET P-CH 100V 7.9A POWER56
P-Channel PowerTrench® MOSFET -100V, -50A, 22mΩ
P-Channel 100 V 22 mOhm 42 nC SMT PowerTrench Mosfet - Power56
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 25 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)7.9 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.085 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max22 mΩ
Rise Time8.8 ns
Schedule B8541290080
Threshold Voltage-2.8 V
Turn-Off Delay Time33 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm
Length5 mm
Width5.85 mm