가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDMS8570S | 81,000 | 14h | |||||||||
| Verical | FDMS8570S | 81,000 | 465 | |||||||||
| Component Stockers USA | FDMS8570S | 19,329 | >1wk | |||||||||
| Win Source | WS-FDMS8570S | 25,000 | 90 | 15h | ||||||||
| Worldway Electronics | FDMS8570S | 28,006 | 7 | Tape & Reel | 15h |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-01-09
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDMS8570S에 대한 설명입니다.
Trans MOSFET N-CH 25V 28A 8-Pin Power 56 T/R
N-CHANNEL POWERTRENCH SYNCFET Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.8 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.825 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.3 W
Rds On Max2.8 mΩ
Rise Time4 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time11 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width5.85 mm