공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-31
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
관련 부품
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
NXP SemiconductorsPSMN8R0-30YL,115
Power Field-Effect Transistor, 62A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPH9030AL,115
Compliant Surface Mount 9 ns Lead Free Tape & Reel (TR) 28 ns 8 mΩ 11 MΩ
설명
유통업체에서 제공한 onsemi FDMS3669S에 대한 설명입니다.
PT7 N 30/20 and PT8 N 30/12 S in Power Stage56 - 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP
Dual MOSFET 900mW N/P Ch 3V 24nC@10V 30V 17mΩ@8.6A,10V 8.6A 7.3A 1.205nF SMD 1.05mm H
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
MOSFET, N-CH, 30V, 18A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power D
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight171 mg
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vds)30 V
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.605 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.5 W
Rds On Max10 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Dimensions
Height1.1 mm
Length5 mm
Width5.9 mm