공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11
관련 부품
InfineonIRFH4201TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH4210DTRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH4210TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 onsemi FDMS2504SDC에 대한 설명입니다.
Trans MOSFET N-CH 25V 42A 8-Pin PQFN T/R
Power Field-Effect Transistor, 42A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
N CH MOSFET, 25V, 42A, 8-PWR56; Transist; N CH MOSFET, 25V, 42A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; No. of Pins:8
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.77 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements1
Power Dissipation104 W
Rds On Max1.25 mΩ
Rise Time9 ns
Threshold Voltage1.6 V
Turn-Off Delay Time44 ns
Turn-On Delay Time18 ns